Title: Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors
Abstract: We report on the current fluctuations of random telegraph signal experimentally observed at cryogenic temperatures in ordinary submicron Si∕SiO2 metal-oxide-semiconductor field-effect transistors (MOSFETs). A giant drain current fluctuation ΔI∕I up to 55% is observed at sub-Kelvin temperature in samples with a large channel width. The current variation is compatible with predictions for decanano MOSFETs at room temperature. The similarity suggests the formation of a quasi-one-dimensional conduction channel at gate voltages sufficiently close to the threshold voltage.
Publication Year: 2008
Publication Date: 2008-06-15
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 17
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