Title: Growth and characterization of high-quality GaN nanowires by ammonification technique
Abstract: GaN nanowires were successfully synthesized at high quality and large yield on Si (1 1 1) substrate through ammoniating Ga2O3/BN films deposited by radio frequency (RF) magnetron sputtering system. X-ray diffraction (XRD), Fourier transformed infrared spectra (FTIR) and selected-area electron diffraction (SAED) confirm that the as-synthesized nanowires are of a hexagonal GaN with wurtzite structure. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) reveal that the nanowires have a straight and smooth curved structure with extremely uniform diameter of about 60 nm, which is helpful to the application of GaN nanowires. The present results demonstrate that the BN is a very important intermedium in the growth of GaN nanowires by this method.
Publication Year: 2005
Publication Date: 2005-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 23
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