Title: Oxygen Transport in Aluminum Nitride Substrates
Abstract: The diffusion of oxygen in commercially available aluminum nitride substrates has been studied by performing interdiffusion‐type experiments. The diffusion of oxygen both within AlN grains and along grain boundaries was investigated. By using as‐received AlN substrates and an electron microprobe as an analytical tool, it was found that the rate of oxygen diffusion along grain boundaries was strongly influenced by the presence of impurities and/or other phases at these boundaries. The diffusion of oxygen within AlN grains was studied between 1600° and 1900°C in a flowing nitrogen atmosphere by using secondary ion mass spectrometry (SIMS) for determining oxygen concentration profiles. The chemical diffusion coefficient of oxygen in the AlN lattice as a function of temperature is described by the equation image The oxygen concentration profiles determined by SIMS also show a contribution from diffusion along grain boundaries. Therefore, it was possible to determine values for the product δD′ o (δ= width of grain boundaries, D′ o = grain boundary diffusion coefficient of oxygen).
Publication Year: 1994
Publication Date: 1994-11-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 13
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