Get quick answers to your questions about the article from our AI researcher chatbot
{'id': 'https://openalex.org/W2091006694', 'doi': 'https://doi.org/10.1002/jnm.796', 'title': 'An analytical study of undoped symmetric double gate MOSFET (SDG)', 'display_name': 'An analytical study of undoped symmetric double gate MOSFET (SDG)', 'publication_year': 2010, 'publication_date': '2010-12-16', 'ids': {'openalex': 'https://openalex.org/W2091006694', 'doi': 'https://doi.org/10.1002/jnm.796', 'mag': '2091006694'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1002/jnm.796', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S201890602', 'display_name': 'International Journal of Numerical Modelling Electronic Networks Devices and Fields', 'issn_l': '0894-3370', 'issn': ['0894-3370', '1099-1204'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320595', 'host_organization_name': 'Wiley', 'host_organization_lineage': ['https://openalex.org/P4310320595'], 'host_organization_lineage_names': ['Wiley'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5100727879', 'display_name': 'Ajay Singh', 'orcid': 'https://orcid.org/0000-0003-2933-4058'}, 'institutions': [{'id': 'https://openalex.org/I173029219', 'display_name': 'Multimedia University', 'ror': 'https://ror.org/04zrbnc33', 'country_code': 'MY', 'type': 'education', 'lineage': ['https://openalex.org/I173029219']}], 'countries': ['MY'], 'is_corresponding': True, 'raw_author_name': 'Ajay Kumar Singh', 'raw_affiliation_strings': ['Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh lama, 75450, Melaka, Malaysia'], 'affiliations': [{'raw_affiliation_string': 'Faculty of Engineering and Technology, Multimedia University, Jalan Ayer Keroh lama, 75450, Melaka, Malaysia', 'institution_ids': ['https://openalex.org/I173029219']}]}], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5100727879'], 'corresponding_institution_ids': ['https://openalex.org/I173029219'], 'apc_list': {'value': 3040, 'currency': 'USD', 'value_usd': 3040, 'provenance': 'doaj'}, 'apc_paid': None, 'fwci': 0.248, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 2, 'citation_normalized_percentile': {'value': 0.603857, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 72, 'max': 75}, 'biblio': {'volume': '24', 'issue': '6', 'first_page': '515', 'last_page': '525'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10361', 'display_name': 'Power Electronics Technology', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/subthreshold-conduction', 'display_name': 'Subthreshold conduction', 'score': 0.77655756}, {'id': 'https://openalex.org/keywords/drain-induced-barrier-lowering', 'display_name': 'Drain-induced barrier lowering', 'score': 0.7747792}, {'id': 'https://openalex.org/keywords/poissons-equation', 'display_name': "Poisson's equation", 'score': 0.58728445}, {'id': 'https://openalex.org/keywords/double-gate', 'display_name': 'Double gate', 'score': 0.57319456}, {'id': 'https://openalex.org/keywords/double-gate-transistors', 'display_name': 'Double-Gate Transistors', 'score': 0.557724}, {'id': 'https://openalex.org/keywords/cmos-scaling', 'display_name': 'CMOS Scaling', 'score': 0.509674}, {'id': 'https://openalex.org/keywords/strained-silicon-technology', 'display_name': 'Strained-Silicon Technology', 'score': 0.505497}, {'id': 'https://openalex.org/keywords/subthreshold-slope', 'display_name': 'Subthreshold slope', 'score': 0.45870978}], 'concepts': [{'id': 'https://openalex.org/C195370968', 'wikidata': 'https://www.wikidata.org/wiki/Q1754002', 'display_name': 'Threshold voltage', 'level': 4, 'score': 0.8306192}, {'id': 'https://openalex.org/C156465305', 'wikidata': 'https://www.wikidata.org/wiki/Q1658601', 'display_name': 'Subthreshold conduction', 'level': 4, 'score': 0.77655756}, {'id': 'https://openalex.org/C73118932', 'wikidata': 'https://www.wikidata.org/wiki/Q5305541', 'display_name': 'Drain-induced barrier lowering', 'level': 5, 'score': 0.7747792}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.7437006}, {'id': 'https://openalex.org/C96716743', 'wikidata': 'https://www.wikidata.org/wiki/Q827688', 'display_name': "Poisson's equation", 'level': 2, 'score': 0.58728445}, {'id': 'https://openalex.org/C3019885731', 'wikidata': 'https://www.wikidata.org/wiki/Q48087455', 'display_name': 'Double gate', 'level': 5, 'score': 0.57319456}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.5349105}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.49994445}, {'id': 'https://openalex.org/C100906024', 'wikidata': 'https://www.wikidata.org/wiki/Q205692', 'display_name': 'Poisson distribution', 'level': 2, 'score': 0.4758163}, {'id': 'https://openalex.org/C103566474', 'wikidata': 'https://www.wikidata.org/wiki/Q7632226', 'display_name': 'Subthreshold slope', 'level': 5, 'score': 0.45870978}, {'id': 'https://openalex.org/C172100665', 'wikidata': 'https://www.wikidata.org/wiki/Q7465774', 'display_name': 'Thermal conduction', 'level': 2, 'score': 0.4364419}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.36526364}, {'id': 'https://openalex.org/C30475298', 'wikidata': 'https://www.wikidata.org/wiki/Q909554', 'display_name': 'Computational physics', 'level': 1, 'score': 0.3434596}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.31738657}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.30857855}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.26134604}, {'id': 'https://openalex.org/C33923547', 'wikidata': 'https://www.wikidata.org/wiki/Q395', 'display_name': 'Mathematics', 'level': 0, 'score': 0.18192399}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.16700801}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.111221015}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C105795698', 'wikidata': 'https://www.wikidata.org/wiki/Q12483', 'display_name': 'Statistics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1002/jnm.796', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S201890602', 'display_name': 'International Journal of Numerical Modelling Electronic Networks Devices and Fields', 'issn_l': '0894-3370', 'issn': ['0894-3370', '1099-1204'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320595', 'host_organization_name': 'Wiley', 'host_organization_lineage': ['https://openalex.org/P4310320595'], 'host_organization_lineage_names': ['Wiley'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 18, 'referenced_works': ['https://openalex.org/W1965774129', 'https://openalex.org/W1990277823', 'https://openalex.org/W2095688642', 'https://openalex.org/W2101701949', 'https://openalex.org/W2105326012', 'https://openalex.org/W2108199406', 'https://openalex.org/W2110169254', 'https://openalex.org/W2119380565', 'https://openalex.org/W2124117184', 'https://openalex.org/W2126810113', 'https://openalex.org/W2129814057', 'https://openalex.org/W2133747703', 'https://openalex.org/W2135818056', 'https://openalex.org/W2153770261', 'https://openalex.org/W2156835791', 'https://openalex.org/W2158161062', 'https://openalex.org/W2294398660', 'https://openalex.org/W2546182664'], 'related_works': ['https://openalex.org/W2329789414', 'https://openalex.org/W2229027422', 'https://openalex.org/W2182128246', 'https://openalex.org/W2155827627', 'https://openalex.org/W2149591383', 'https://openalex.org/W2105853365', 'https://openalex.org/W2083674717', 'https://openalex.org/W2062767191', 'https://openalex.org/W2048408144', 'https://openalex.org/W2021229222'], 'abstract_inverted_index': {'Abstract': [0], 'In': [1], 'the': [2, 9, 46, 58, 66, 78, 84, 91, 135], 'present': [3], 'paper,': [4], 'compact': [5, 138], 'analytical': [6, 28, 118], 'models': [7, 39, 119], 'for': [8, 34, 74, 112, 137], 'threshold': [10, 12, 53, 87], 'voltage,': [11], 'voltage': [13, 54, 88], 'roll‐off': [14], 'and': [15, 68], 'subthreshold': [16, 103], 'swing': [17], 'of': [18, 30, 127], 'undoped': [19], 'symmetrical': [20, 128], 'double‐gate': [21], 'MOSFET': [22], 'have': [23], 'been': [24], 'developed': [25, 38], 'based': [26], 'on': [27], 'solution': [29], 'two‐dimensional': [31], "Poisson's": [32], 'equation': [33], 'potential': [35, 75], 'distribution.': [36], 'The': [37, 51, 71, 86, 116], 'include': [40], 'drain‐induced': [41], 'barrier': [42], 'lowering': [43], '(DIBL)': [44], 'through': [45], 'V': [47], 'ds': [48], '‐dependent': [49], 'parameter.': [50], 'calculated': [52], 'value,': [55], 'obtained': [56], 'from': [57], 'proposed': [59, 117], 'model,': [60], 'shows': [61], 'a': [62], 'good': [63], 'agreement': [64], 'with': [65], 'experimental': [67], 'published': [69], 'results.': [70], 'simulation': [72], 'results': [73], 'show': [76], 'that': [77, 102], 'conduction': [79], 'is': [80, 93, 105], 'highly': [81], 'confined': [82], 'to': [83, 90, 95, 109], 'surfaces.': [85], 'sensitivity': [89], 'thickness': [92], 'found': [94], 'be': [96], 'approximately': [97], '0.2%.': [98], 'Model': [99], 'prediction': [100], 'indicates': [101], 'slope': [104], 'not': [106, 120], 'linearly': [107], 'related': [108], 'DIBL': [110], 'parameter': [111], 'thick': [113], 'silicon': [114], 'film.': [115], 'only': [121], 'provide': [122], 'useful': [123], 'insight': [124], 'into': [125], 'behavior': [126], 'DG': [129], 'MOSFETs': [130], 'but': [131], 'also': [132], 'serve': [133], 'as': [134], 'basis': [136], 'modeling.': [139], 'Copyright': [140], '©': [141], '2010': [142], 'John': [143], 'Wiley': [144], '&': [145], 'Sons,': [146], 'Ltd.': [147]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2091006694', 'counts_by_year': [{'year': 2022, 'cited_by_count': 1}, {'year': 2013, 'cited_by_count': 1}], 'updated_date': '2024-08-13T15:46:40.388592', 'created_date': '2016-06-24'}