Title: Epitaxial growth of HgCdTe on sapphire for photovoltaic detectors
Abstract: We developed a technique for growing Hg<SUB>0.7</SUB>Cd<SUB>0.3</SUB>Te on CdTe/sapphire. Using metal organic chemical vapor deposition (MOCVD), we grew CdTe on sapphire substrates. We use a combination of isothermal vapor phase epitaxy (ISOVPE) followed by liquid phase epitaxy (LPE) to grow Hg<SUB>0.7</SUB>Cd<SUB>0.3</SUB>Te on them. The ISOVPE converts the surface of the CdTe layer to Hg<SUB>0.7</SUB>Cd<SUB>0.3</SUB>Te, which decreases the lattice mismatch between CdTe and HgCdTe and decreases the surface defects on HgCdTe that originate from lattice mismatching. After growth, we annealed the wafer in a Hg atmosphere to control the carrier concentration. We used the performance of photovoltaic detectors to examine the wafer quality. A typical diode with a 5-micrometers cutoff wavelength had a responsivity (Re) value or 2.87 A/W. The diffusion current limits R<SUB>0</SUB>A down to 120 K, and the generation- recombination (g-r) current limits R<SUB>0</SUB>A at 77 K.
Publication Year: 1994
Publication Date: 1994-10-17
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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