Title: <title>Preamplifier Noise In Indium Antimonide Detector Systems</title>
Abstract: Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.
Publication Year: 1980
Publication Date: 1980-12-03
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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