Title: Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in BiCMOS technologies
Abstract: This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.
Publication Year: 2007
Publication Date: 2007-09-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
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