Title: Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method
Abstract: This paper reports a solution-based method for the application of multiple nanostructures on full surface of GZO/GaN-based LEDs to enhance light-extraction efficiency. Ga-doped ZnO (GZO) was deposited to a thickness of 1μm and an n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -InGaN/GaN short-period superlattice structure was grown to improve the electrical characteristics of the LEDs, including series resistance and operating voltage. A solution-based method was used to control the density of ZnO nanoparticles deposited on the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer for use as self-assembled etching nanomasks. Multiple nanostructures were simultaneously formed on the surfaces of GZO, p-GaN, and n-GaN by dry etching. The proposed LEDs increase light output power by 10%-27% (at 20 mA) over that of regular GaN-based LEDs. The difference in light output power can be attributed to differences in the shape, thickness, and density of GZO and GaN nanostructures, resulting in a reduction in Fresnel reflection provided by the roughened surface of the GaN-based LEDs.
Publication Year: 2014
Publication Date: 2014-08-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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