Title: A low-power CMOS low-noise amplifier for ultra-wideband applications
Abstract: This paper presents a low-power CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) applications using a cascoded common-gate (CG) topology. The CG-LNA is fabricated by a standard 0.18-µm CMOS process with a chip size of 0.77 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The CMOS UWB LNA dissipates 10.7 mW and achieves |S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> | below −10.2 dB, |S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</inf> | below −9.7 dB, and |S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> | below −37.3 dB. Moreover, the power gain |S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> | achieves a maximum of 14.5 dB at 10.42 GHz, and the noise figure is 3.6±0.2 dB at the frequency of interest. The input P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> and IIP3 is −26.8 dBm and −15.7 dBm, respectively.
Publication Year: 2013
Publication Date: 2013-06-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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