Title: InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers
Abstract: Direct measurements of homojunction and heterojunction carrier leakage currents in InGaAsP/InP buried heterostructure lasers have been made by monitoring the electroluminescence (EL) at 0.96 μm in the InP confinement layers. These EL measurements show directly, for the first time, a correlation between homojunction leakage currents and the sublinearity in the 1.3-μm light output-current characteristic. The observed decrease in the 0.96-μm intensity with increasing p-dopant concentration is a direct confirmation that heterojunction leakage is reduced when the doping level in the p-InP confinement layer is increased.
Publication Year: 1987
Publication Date: 1987-12-15
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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