Abstract: Advanced MaterialsVolume 23, Issue 8 p. 1025-1029 Communication On-Nanowire Band-Graded Si:Ge Photodetectors Cheol-Joo Kim, Cheol-Joo Kim Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorHyun-Seung Lee, Hyun-Seung Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorYong-Jun Cho, Yong-Jun Cho Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorJee-Eun Yang, Jee-Eun Yang Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorRu Ri Lee, Ru Ri Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorJa Kyung Lee, Ja Kyung Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorMoon-Ho Jo, Corresponding Author Moon-Ho Jo [email protected] Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea.Search for more papers by this author Cheol-Joo Kim, Cheol-Joo Kim Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorHyun-Seung Lee, Hyun-Seung Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorYong-Jun Cho, Yong-Jun Cho Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorJee-Eun Yang, Jee-Eun Yang Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorRu Ri Lee, Ru Ri Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorJa Kyung Lee, Ja Kyung Lee Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaSearch for more papers by this authorMoon-Ho Jo, Corresponding Author Moon-Ho Jo [email protected] Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, KoreaDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-Dong, Nam Gu, Pohang, Gyungbuk 790–784, Korea.Search for more papers by this author First published: 14 January 2011 https://doi.org/10.1002/adma.201004034Citations: 34Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract An on-nanowire (on-NW) band-graded photodetector that pertains to the on-nanowire composition gradation from pure Si to pure Ge, Si1–xGex (0 ≤ x ≤ 1), is reported. The spectral onset of interband photocarrier generation and photocurrent amplitude are on-NW de-multiflexed over the continuously varying energy band gap and surface trap state density in an individually addressable manner. Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201004034_sm_suppl.pdf419.4 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. 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Publication Year: 2011
Publication Date: 2011-01-14
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 36
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