Title: Residual impurities in high purity GaAs epitaxial layers grown by liquid phase epitaxy
Abstract: Abstract Residual impurities in n-type high purity GaAs epitaxial layers grown by liquid phase epitaxy in graphite and quartz boats were studied. Low temperature near-band photoluminescence and far-IR photoconductivity techniques were used to identify the impurities. The major donor impurity is shown to be silicon rather than the previously reported carbon; this results in higher background density levels, possibly owing to a complex.
Publication Year: 1980
Publication Date: 1980-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 5
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