Publication Information

{'id': 'https://openalex.org/W2076677140', 'doi': 'https://doi.org/10.1063/1.1409594', 'title': 'Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization', 'display_name': 'Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization', 'publication_year': 2001, 'publication_date': '2001-10-15', 'ids': {'openalex': 'https://openalex.org/W2076677140', 'doi': 'https://doi.org/10.1063/1.1409594', 'mag': '2076677140'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.1409594', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S105243760', 'display_name': 'Applied Physics Letters', 'issn_l': '0003-6951', 'issn': ['0003-6951', '1077-3118', '1520-8842'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5011336008', 'display_name': 'Ki Tae Nam', 'orcid': 'https://orcid.org/0000-0001-6353-8877'}, 'institutions': [{'id': 'https://openalex.org/I139264467', 'display_name': 'Seoul National University', 'ror': 'https://ror.org/04h9pn542', 'country_code': 'KR', 'type': 'education', 'lineage': ['https://openalex.org/I139264467']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Ki Tae Nam', 'raw_affiliation_strings': ['School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea'], 'affiliations': [{'raw_affiliation_string': 'School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea', 'institution_ids': ['https://openalex.org/I139264467']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5111999647', 'display_name': 'Arindom Datta', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I139264467', 'display_name': 'Seoul National University', 'ror': 'https://ror.org/04h9pn542', 'country_code': 'KR', 'type': 'education', 'lineage': ['https://openalex.org/I139264467']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Arindom Datta', 'raw_affiliation_strings': ['School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea'], 'affiliations': [{'raw_affiliation_string': 'School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea', 'institution_ids': ['https://openalex.org/I139264467']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5100379514', 'display_name': 'Soo‐Hyun Kim', 'orcid': 'https://orcid.org/0000-0003-3748-2755'}, 'institutions': [{'id': 'https://openalex.org/I139264467', 'display_name': 'Seoul National University', 'ror': 'https://ror.org/04h9pn542', 'country_code': 'KR', 'type': 'education', 'lineage': ['https://openalex.org/I139264467']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Soo-Hyun Kim', 'raw_affiliation_strings': ['School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea'], 'affiliations': [{'raw_affiliation_string': 'School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea', 'institution_ids': ['https://openalex.org/I139264467']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5100655034', 'display_name': 'Ki‐Bum Kim', 'orcid': 'https://orcid.org/0000-0003-1392-5021'}, 'institutions': [{'id': 'https://openalex.org/I139264467', 'display_name': 'Seoul National University', 'ror': 'https://ror.org/04h9pn542', 'country_code': 'KR', 'type': 'education', 'lineage': ['https://openalex.org/I139264467']}], 'countries': ['KR'], 'is_corresponding': False, 'raw_author_name': 'Ki-Bum Kim', 'raw_affiliation_strings': ['School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea'], 'affiliations': [{'raw_affiliation_string': 'School of Materials Science and Engineering, Seoul National University, Seoul\u2009151-742, Korea', 'institution_ids': ['https://openalex.org/I139264467']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 2.411, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 44, 'citation_normalized_percentile': {'value': 0.8786, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 91, 'max': 92}, 'biblio': {'volume': '79', 'issue': '16', 'first_page': '2549', 'last_page': '2551'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T11853', 'display_name': 'Semiconductor materials and interfaces', 'score': 0.9986, 'subfield': {'id': 'https://openalex.org/subfields/3107', 'display_name': 'Atomic and Molecular Physics, and Optics'}, 'field': {'id': 'https://openalex.org/fields/31', 'display_name': 'Physics and Astronomy'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.9976, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/diffusion-barrier', 'display_name': 'Diffusion barrier', 'score': 0.9289988}, {'id': 'https://openalex.org/keywords/barrier-layer', 'display_name': 'Barrier layer', 'score': 0.837136}, {'id': 'https://openalex.org/keywords/rectangular-potential-barrier', 'display_name': 'Rectangular potential barrier', 'score': 0.42379567}], 'concepts': [{'id': 'https://openalex.org/C2778836790', 'wikidata': 'https://www.wikidata.org/wiki/Q5275435', 'display_name': 'Diffusion barrier', 'level': 3, 'score': 0.9289988}, {'id': 'https://openalex.org/C525849907', 'wikidata': 'https://www.wikidata.org/wiki/Q1096', 'display_name': 'Tin', 'level': 2, 'score': 0.90306526}, {'id': 'https://openalex.org/C2779833192', 'wikidata': 'https://www.wikidata.org/wiki/Q17015866', 'display_name': 'Barrier layer', 'level': 3, 'score': 0.837136}, {'id': 'https://openalex.org/C69357855', 'wikidata': 'https://www.wikidata.org/wiki/Q163214', 'display_name': 'Diffusion', 'level': 2, 'score': 0.6815562}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.67731875}, {'id': 'https://openalex.org/C47908070', 'wikidata': 'https://www.wikidata.org/wiki/Q900515', 'display_name': 'Grain boundary', 'level': 3, 'score': 0.66183406}, {'id': 'https://openalex.org/C183808158', 'wikidata': 'https://www.wikidata.org/wiki/Q5593506', 'display_name': 'Grain boundary diffusion coefficient', 'level': 4, 'score': 0.5264892}, {'id': 'https://openalex.org/C22423302', 'wikidata': 'https://www.wikidata.org/wiki/Q898444', 'display_name': 'Sputtering', 'level': 3, 'score': 0.48167145}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.46195415}, {'id': 'https://openalex.org/C201966971', 'wikidata': 'https://www.wikidata.org/wiki/Q844922', 'display_name': 'Rectangular potential barrier', 'level': 2, 'score': 0.42379567}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.35694212}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.3460135}, {'id': 'https://openalex.org/C19067145', 'wikidata': 'https://www.wikidata.org/wiki/Q1137203', 'display_name': 'Thin film', 'level': 2, 'score': 0.31561422}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.19848776}, {'id': 'https://openalex.org/C87976508', 'wikidata': 'https://www.wikidata.org/wiki/Q1498213', 'display_name': 'Microstructure', 'level': 2, 'score': 0.17755446}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.1575968}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C97355855', 'wikidata': 'https://www.wikidata.org/wiki/Q11473', 'display_name': 'Thermodynamics', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1063/1.1409594', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S105243760', 'display_name': 'Applied Physics Letters', 'issn_l': '0003-6951', 'issn': ['0003-6951', '1077-3118', '1520-8842'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310320257', 'host_organization_name': 'American Institute of Physics', 'host_organization_lineage': ['https://openalex.org/P4310320257'], 'host_organization_lineage_names': ['American Institute of Physics'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 14, 'referenced_works': ['https://openalex.org/W1555969351', 'https://openalex.org/W1958232380', 'https://openalex.org/W1963524894', 'https://openalex.org/W1991190052', 'https://openalex.org/W2026500752', 'https://openalex.org/W2028606097', 'https://openalex.org/W2028793278', 'https://openalex.org/W2031032596', 'https://openalex.org/W2050754626', 'https://openalex.org/W2058838733', 'https://openalex.org/W2063947867', 'https://openalex.org/W2079289690', 'https://openalex.org/W2112288727', 'https://openalex.org/W2898712814'], 'related_works': ['https://openalex.org/W4391111357', 'https://openalex.org/W4377089197', 'https://openalex.org/W2613510885', 'https://openalex.org/W2465054275', 'https://openalex.org/W2286264892', 'https://openalex.org/W2076677140', 'https://openalex.org/W2012707444', 'https://openalex.org/W1992456528', 'https://openalex.org/W1991928462', 'https://openalex.org/W1982785824'], 'abstract_inverted_index': {'A': [0], 'laterally': [1, 43], 'segregated': [2, 42], 'diffusion': [3, 58, 67, 97, 116], 'barrier': [4, 22, 28, 51, 77, 98, 109], 'was': [5, 85], 'investigated': [6], 'for': [7], 'Cu': [8, 115], 'metallization.': [9], 'In': [10], 'this': [11, 39, 74], 'scheme,': [12], 'the': [13, 26, 35, 45, 49, 56, 60, 65, 79, 108, 111, 118], 'intended': [14], 'final': [15], 'structure': [16, 84], 'is': [17, 25, 41, 125], 'composed': [18], 'of': [19, 48, 64, 76], 'two': [20], 'different': [21], 'materials;': [23], 'one': [24], 'parent': [27, 50, 66], 'layer': [29], '(TiN,': [30], 'in': [31, 38], 'our': [32], 'case)': [33, 40], 'and': [34, 90], 'other': [36], '(Al2O3,': [37], 'along': [44], 'grain': [46, 62], 'boundaries': [47, 63], 'layer.': [52], 'As': [53], 'a': [54, 96, 132], 'result,': [55], 'fast': [57], 'paths,': [59], 'so-called': [61], 'barrier,': [68], 'are': [69], 'effectively': [70], 'passivated.': [71], 'To': [72], 'realize': [73], 'type': [75], 'experimentally,': [78], 'TiN(5': [80], 'nm)/Al(2': [81], 'nm)/TiN(5': [82], 'nm)': [83, 94, 134], 'fabricated': [86], 'by': [87, 131], 'sequential': [88], 'sputtering': [89], 'compared': [91], 'with': [92, 110], 'TiN(10': [93, 133], 'as': [95], 'against': [99], 'Cu.': [100], 'The': [101], 'etch': [102], 'pit': [103], 'test': [104], 'results': [105], 'indicated': [106], 'that': [107], 'Al': [112], 'interlayer': [113], 'prevented': [114], 'into': [117], 'Si': [119], 'up': [120], 'to': [121], '650': [122], '°C,': [123], 'which': [124], '250': [126], '°C': [127], 'higher': [128], 'than': [129], 'achieved': [130], 'barrier.': [135]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W2076677140', 'counts_by_year': [{'year': 2024, 'cited_by_count': 1}, {'year': 2023, 'cited_by_count': 2}, {'year': 2022, 'cited_by_count': 2}, {'year': 2020, 'cited_by_count': 2}, {'year': 2019, 'cited_by_count': 3}, {'year': 2017, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 2}, {'year': 2014, 'cited_by_count': 2}, {'year': 2013, 'cited_by_count': 3}, {'year': 2012, 'cited_by_count': 3}], 'updated_date': '2025-01-05T20:54:09.122210', 'created_date': '2016-06-24'}