Title: One-dimensional transport in quantum well wire-high electron mobility transistor
Abstract:A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electr...A novel one-dimensional electron gas field-effect transistor (FET) is proposed with the advantages of higher electron mobility and higher carrier concentration than conventional two-dimensional electron gas FET. The FET structure, device operation, and the low-field mobility of impurity scattering, which takes the screening effect into account, are discussed.Read More
Publication Year: 1986
Publication Date: 1986-12-22
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 27
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