Title: Ultra-shallow depth profiling with time-of-flight secondary ion mass spectrometry
Abstract: Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is an efficient, sensitive method for characterizing semiconductor surfaces. In addition, TOF-SIMS can be applied in a depth profiling mode allowing qualitative characterization of the top 20 nm of material. The utility of TOF-SIMS ultra-shallow depth profiling is demonstrated on GaAs substrates that were passivated with P2S5 solutions and oxidized by exposure to an UV/ozone treatment.
Publication Year: 1994
Publication Date: 1994-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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