Title: Comparison of calculated depth distributions of implanted ions for genuine and Ge-substituted InP targets
Abstract: Abstract Both MARLOWE-based computer simulation and transport theory have been used to evaluate the depth distributions of ion range and damage in InP assuming diatomic or monoatomic (Ge-substituted) targets. Results indicate that the mean depth and straggling in both distributions are higher for the diatomic target but deviations are less than 10–15% for the cases studied: N, Zn and Bi ions in the energy range of 10 to 40 keV.
Publication Year: 1986
Publication Date: 1986-03-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 1
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot