Title: Effect of Mesoscale Crystalline Structure on the Field-Effect Mobility of Regioregular Poly(3-hexyl thiophene) in Thin-Film Transistors
Abstract: Advanced Functional MaterialsVolume 15, Issue 4 p. 671-676 Full Paper Effect of Mesoscale Crystalline Structure on the Field-Effect Mobility of Regioregular Poly(3-hexyl thiophene) in Thin-Film Transistors H. Yang, H. Yang Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, NY 12180, USA Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, KoreaSearch for more papers by this authorT. J. Shin, T. J. Shin BNL, National Synchrotron Light Source, Upton, NY 11973, USASearch for more papers by this authorL. Yang, L. Yang BNL, National Synchrotron Light Source, Upton, NY 11973, USASearch for more papers by this authorK. Cho, K. Cho Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, KoreaSearch for more papers by this authorC. Y. Ryu, C. Y. Ryu [email protected] Search for more papers by this authorZ. Bao, Z. Bao [email protected] Search for more papers by this author H. Yang, H. Yang Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, NY 12180, USA Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, KoreaSearch for more papers by this authorT. J. Shin, T. J. Shin BNL, National Synchrotron Light Source, Upton, NY 11973, USASearch for more papers by this authorL. Yang, L. Yang BNL, National Synchrotron Light Source, Upton, NY 11973, USASearch for more papers by this authorK. Cho, K. Cho Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, KoreaSearch for more papers by this authorC. Y. Ryu, C. Y. Ryu [email protected] Search for more papers by this authorZ. Bao, Z. Bao [email protected] Search for more papers by this author First published: 23 March 2005 https://doi.org/10.1002/adfm.200400297Citations: 526AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract Regioregular poly(3-hexyl thiophene) (RR P3HT) is drop-cast to fabricate field-effect transistor (FET) devices from different solvents with different boiling points and solubilities for RR P3HT, such as methylene chloride, toluene, tetrahydrofuran, and chloroform. A Petri dish is used to cover the solution, and it takes less than 30 min for the solvents to evaporate at room temperature. The mesoscale crystalline morphology of RR P3HT thin films can be manipulated from well-dispersed nanofibrils to well-developed spherulites by changing solution processing conditions. The morphological correlation with the charge-carrier mobility in RR P3HT thin-film transistor (TFT) devices is investigated. The TFT devices show charge-carrier mobilities in the range of 10–4 ∼ 10–2 cm2 V–1 s–1 depending on the solvent used, although grazing-incidence X-ray diffraction (GIXD) reveals that all films develop the same π–π-stacking orientation, where the <100>-axis is normal to the polymer films. By combining results from atomic force microscopy (AFM) and GIXD, it is found that the morphological connectivity of crystalline nanofibrils and the <100>-axis orientation distribution of the π–π-stacking plane with respect to the film normal play important roles on the charge-carrier mobility of RR P3HT for TFT applications. REFERENCES 1 A. J. Lovinger, L. J. Rothberg, J. Mater. Res. 1996, 11, 1581. 10.1557/JMR.1996.0198 CASWeb of Science®Google Scholar 2 H. E. Katz, J. Mater. Chem. 1997, 7, 369. 10.1039/a605274f CASWeb of Science®Google Scholar 3 F. Garnier, R. Hajlaoui, A. Yassar, P. Strivastava, Science 1994, 265, 1684. 10.1126/science.265.5179.1684 CASPubMedWeb of Science®Google Scholar 4 A. Tsumura, H. Koezuka, T. Ando, Appl. Phys. Lett. 1986, 49, 1210. 10.1063/1.97417 CASWeb of Science®Google Scholar 5 H. Koezuka, A. Tsumura, T. Ando, Synth. Met. 1987, 18, 699. 10.1016/0379-6779(87)90964-7 CASWeb of Science®Google Scholar 6 J. Paloheimo, P. Kuivalainen, H. Stubb, E. 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Publication Year: 2005
Publication Date: 2005-04-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 555
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