Abstract: A phenomenological model for the average expended energy ε to produce an electron-hole pair is derived for silicon and germanium. The values agree well with experimental data at room temperature and at 77 °K. By using this model to calculate the Fano factor F, it has been found that F ≅ 0.05 for both silicon and germanium. It is concluded that under perfect charge-collection conditions, germanium-radiation detectors will show better energy resolution than silicon detectors because of the lower ε in germanium.
Publication Year: 1971
Publication Date: 1971-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 16
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