Title: Recombination in thin film Si:H p-i-n solar cells
Abstract: A numerical model incorporating distributed defect and dopant states was used to simulate a p-i-n solar cell under sunlight illumination. Different regions of the cell dominate the recombination at different voltages. The charge distribution of the amphoteric defects and the resulting recombination are quite complex.
Publication Year: 1987
Publication Date: 1987-12-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 7
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