Title: B diffusion in Si predamaged with Si+ near the threshold dose of amorphization
Abstract:We studied B diffusion in Si predamaged with Si+ near the threshold dose of amorphization. In Si preimplanted in the amorphization condition (Si+ 40 keV, 5.0×1014 cm−2), a B-profile kink appears to be...We studied B diffusion in Si predamaged with Si+ near the threshold dose of amorphization. In Si preimplanted in the amorphization condition (Si+ 40 keV, 5.0×1014 cm−2), a B-profile kink appears to be induced from retarded diffusion after 800 °C annealing. In the 3.0×1014 cm−2 preimplanted sample, an enhanced diffusion tail appears in addition to the kink. The tail has a diffusivity of 1×10−14 cm2/s. Amorphous islands about 10 nm in diameter were observed in Si predamaged with Si+ 40 keV, 3.3×1014 cm−2 by a cross-sectional transmission electron microscope. We speculate that the kink and tail originate in the vacancy and interstitial-rich region, respectively.Read More
Publication Year: 1991
Publication Date: 1991-09-09
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 10
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