Title: Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
Abstract: Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y2O3 passivation layer. A recent photoemission study revealed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel. Here, we present that these deep defects are responsible for the instability of a-IGZO TFTs, and the instability can be much improved by passivation with Y2O3, which effectively eliminates the deep subgap defects from the surface of a-IGZO.
Publication Year: 2011
Publication Date: 2011-08-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 172
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