Title: Investigation of Si/4H-SiC Hetero-Junction Growth and Electrical Properties
Abstract: This paper describes the growth and characterisation of Si/SiC heterojunction structures. Heterojunction structures are of interest for low on-resistance diodes and as potential solutions to fabricating SiC MOS devices with lower interface state densities. The formation of the Si/SiC heterojunction using Chemical Vapour Deposition (CVD), Molecular Beam Epitaxy (MBE), Electron Beam Evaporation under UHV conditions (EBE-UHV) and Layer Transfer (LT) are reported. The physical nature of Si/SiC structures has been investigated using scanning electron microscopy (SEM). Results of electrical characterisation of the Si/SiC heterojunctions, are also reported. Finally, thermal oxidation of a Si / SiC heterojunction structures has been performed. The C(V) characteristics of the resulting oxides are compared to conventional thermal oxides on SiC.
Publication Year: 2009
Publication Date: 2009-03-02
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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