Title: Surface energy and relaxation effects at (111) semiconductor surfaces
Abstract: Abstract A local orbital method is used to calculate the relaxed position of the unreconstructed (111) surface layer of atoms in a silicon or diamond crystal. The separation of the outermost layers decreases to about 40% of its bulk value and the surface energy is found to be about 1.0 eV per surface atom for silicon and 1.6 eV for carbon.
Publication Year: 1975
Publication Date: 1975-10-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 8
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