Title: Atomic Layer Deposition and Characterization of GeTe Thin Films
Abstract:GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to verify growth properties typical of ALD. Film compositions were determined to be stoichiometric wi...GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to verify growth properties typical of ALD. Film compositions were determined to be stoichiometric with low impurity content. Film growth demonstrated characteristic ALD behavior with easily controlled film thickness and excellent conformality. The resistivity decrease during crystallization was six orders of magnitude. The crystallization properties of ALD GeTe, in general, were found to be similar to those of sputtered films.Read More