Title: Proximity effect and point-contact spectroscopy of superconductors in the dirty limit
Abstract: On the base of a microscopic theory, the voltage dependence of the resistance R(V) is calculated in the dirty limit for a system consisting of a point contact and a bilayer N/S. In the case of a highly transparent N/S interface, a change in the R(V) curve with an increase of the N layer thickness dN is found. It is shown that at dN<ξN the R(V) curve is determined by the proximity effect. At dN⪢ξN the proximity effect is not important, and the R(V) curve is determined by the penetration of quasiparticles into the S layer at V > Δ. In the case of a weakly transparent N/S interface, there are two peculiarities in the R(V) curve at V1=Δ and V2=max{γN, ϵN} (ϵN is a parameter characterizing the N/S interface transmittance, γN is the deparing rate). These peculiarities are related to a change in the excitation spectrum of the N layer due to the proximity effect; at the same time ΔN=0.
Publication Year: 1994
Publication Date: 1994-05-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 21
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