Title: Compound Semiconductor Photodetectors: A Review
Abstract: In this article design and material aspects of photodetectors are discussed in detail. The fabrication of InGaAs PIN photodiodes by LPE using novel impurity gettering technique by rare-earths is described. State-of-the-art microcavity, metal-semiconductor-metal and quantum well infrared photodetectors are reviewed. Finally some new photodetectors are discussed.
Publication Year: 1997
Publication Date: 1997-03-01
Language: en
Type: review
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
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