Title: Effects of process parameters on the structure of hydrogenated amorphous carbon films processed by electron cyclotron resonance plasma enhanced chemical vapor deposition
Abstract: The paper presents the investigation of the effect of the process parameters on the structure of hydrogenated amorphous carbon (a-C:H) films deposited on Si(100) substrate by electron cyclotron resonance microwave plasma chemical vapor deposition method (ECR-PCVD). The investigation is based on an orthogonal experimental design and analysis method. Both the carbon sp3/sp2 bonding ratio and hydrogen content are evaluated from the visible Raman spectra deconvolution. The statistical results indicate that the sp3/sp2 bonding ratio is mainly affected by microwave power, and it decreases as the microwave power increases. The hydrogen content in a-C:H films is mainly affected by the substrate bias voltage, and it decreases with increasing the bias voltage. The effect of other parameters on the structure of a-C:H films is relatively not significant, but is also discussed in the paper.
Publication Year: 2010
Publication Date: 2010-06-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 5
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot