Title: Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature
Abstract: The interface disorder of quantum wells grown by molecular beam epitaxy at high substrate temperature is investigated by low-temperature photoluminescence. The excitonic emission from a single quantum well is a single sharp peak, and the well width precisely determined from the emission peak energy does not equal to integral multiples of one-monolayer width in almost all samples. These results indicate that the lateral size of growth islands with a one-monolayer height is much smaller than the exciton diameter and a one-monolayer interface acts as a layer with smaller AlAs mole fraction than the barrier layer.
Publication Year: 1985
Publication Date: 1985-11-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 65
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot