Title: Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in Silicon
Abstract: A microscopic model is proposed which explains recent observations that acceptor shallow levels in crystalline silicon can be inactivated by atomic hydrogen. We are assuming that substitutionalboron-interstitial-hydrogen complex pairs are being formed which passivate the shallow acceptor action of the boron impurity. Rigorous self-consistent calculations show that the acceptor level is removed from the gap and the boron electrical activity is clearly neutralized.
Publication Year: 1985
Publication Date: 1985-08-26
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
Access and Citation
Cited By Count: 100
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