Title: High-density trench gate DMOSFETs with trench contact structure
Abstract: A novel process technique for fabricating trench gate DMOSFETs using the two-step trench technique and trench contact structure is realised to obtain higher cell density and lower on-resistance. Using this process technique, a remarkably increased trench gate DMOSFET with a cell pitch of 1.6 µm and a channel density of 130 Mcell/in2 are obtained. The fabricated device has a low specific on-resistance of 0.28 mΩ · cm2 with a blocking voltage of 43 V, which is about 23 % lower than that of the device fabricated by the previous method.
Publication Year: 2004
Publication Date: 2004-01-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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