Title: Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process
Abstract:Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kin...Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semiconductor manufacturing, many processes are used to remove oxides damaged during ion implantation or reactive ion etching on the device surface. Therefore, it is very important to understand the etching properties of plasma-less gaseous etching processes for damaged oxides as well as those for other kinds of oxides. In this report, we evaluate the etching properties of one particular plasma-less gaseous etching process for oxide films damaged during the ion implantation process under various conditions and discuss the mechanism of interesting etching properties for the damaged oxides.Read More
Publication Year: 2009
Publication Date: 2009-01-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 7
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot