Title: Depth resolution in SIMS study of boron δ-doping in epitaxial silicon
Abstract: Abstract Microelectronic needs accurate analysis of very thin layers as delta doped structures. By secondary ion mass spectrometry (SIMS) with O2+ ion beam, we analyse mono-delta of boron in silicon located at 30 nm under the surface and then a multi-delta of boron in silicon located just under the surface ( ≈ 10 nm). For the mono-delta, we study modifications of the SIMS profiles within the projected range of primary ion beam Rp. From the dependence of FWHM within Rp, we deduce the real thickness of pseudo-delta thin layers by assuming a convolution process for SIMS measurements. This assumption is well confirmed by the analysis of a boron tri-delta doped layers.
Publication Year: 1994
Publication Date: 1994-03-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 10
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