Title: Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device
Abstract: Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.
Publication Year: 2008
Publication Date: 2008-12-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 52
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