Abstract: We present the findings of the room temperature operation that is demonstrated by the single-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is performed on the basis of the quantum wire and the quantum dot which is self-assembly formed as a multiple-tunnel junction by short-time diffusion of boron into the Si(100)-wafer. The single-hole device obtained exhibits the Coulomb oscillations and the memory effects as a hysteresis in CV characteristics which are respectively revealed by varying the gate and drain-source voltage in the process of the local tunneling spectroscopy measurements.
Publication Year: 2001
Publication Date: 2001-02-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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