Abstract:A full field, short exposure time x‐ray lithography system which is capable of submicron lithography on silicon wafers is described. The optimum system configuration is determined and a new high flux ...A full field, short exposure time x‐ray lithography system which is capable of submicron lithography on silicon wafers is described. The optimum system configuration is determined and a new high flux x‐ray lithography source is identified. The overall system performance is summarized including resolution, exposure time, overlay capability, mask stability and technology, experimental x‐ray resist evaluation, and evaluation of source radiation effects on silicon MOS integrated circuits.Read More
Publication Year: 1981
Publication Date: 1981-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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