Title: An Oxide-Diluted Magnetic Semiconductor: Co-Doped ZnO
Abstract: The discovery of ferromagnetism (FM) in wide band-gap semiconductors doped with transition metals (TM), known as diluted magnetic semiconductors (DMSs), has attracted much interest. These materials are applicable to spin-based optoelectronic devices working at room temperature (RT). Among DMSs, the system of Co-doped ZnO is considered as the most promising candidate, which was expected to robust magnetism. This paper focuses primarily on the recent progress in the experimental studies of ZnO:Co DMSs. The magnetic properties and possible mechanism of ZnO:Co DMSs prepared by different methods are summarized and reviewed.
Publication Year: 2013
Publication Date: 2013-01-25
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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