Abstract: A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
Publication Year: 1984
Publication Date: 1984-04-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 7
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