Title: Current Carriers Scattering on the Neutral Impurity Atoms in Crystals of Indium Phosphide
Abstract: Electrical properties of n‐type crystals of indium phosphide in the temperature range 4.2–300 K have been investigated. Comparison of experimental and theoretical data of carriers mobility has shown, that current carriers scattering on the neutral impurity atoms cannot be explained by the theory based on the model of current carriers scattering by neutral hydrogen type atoms. The carriers mobility, concerned with scattering on the neutral impurity atoms, cannot be explained only in terms of scattering on the neutral centers. There should be taken into account the contribution of disorder scattering, associated with disordered arrangement of neutral impurity atoms in InP.
Publication Year: 2011
Publication Date: 2011-01-01
Language: en
Type: article
Indexed In: ['crossref']
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