Title: Effect of annealing and light exposure on the field-effect density of states in glow-discharge a-Si: H
Abstract:Abstract The field effect has been examined as a technique for determining the density of gap states in a-Si: H. It gives the field-effect density of states N F(E) to an accuracy of a factor of two an...Abstract The field effect has been examined as a technique for determining the density of gap states in a-Si: H. It gives the field-effect density of states N F(E) to an accuracy of a factor of two and is therefore most useful for studying changes in a sample as it undergoes a series of treatments. Using the field effect the first direct evidence has been obtained for an increase in N F(E) as a-Si: H is annealed above T A ∼ 300°C or after prolonged exposure to light. The photofield effect is shown to be a promising new tool for studying both electron and hole photoconductivity in the same sample.Read More
Publication Year: 1982
Publication Date: 1982-04-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 47
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