Title: Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Abstract: Advanced MaterialsVolume 22, Issue 37 p. 4140-4145 Communication Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) Jeongho Park, Corresponding Author Jeongho Park [email protected] Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA).Search for more papers by this authorWilliam C. Mitchel, William C. Mitchel Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorLawrence Grazulis, Lawrence Grazulis Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorHoward E. Smith, Howard E. Smith Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorKurt G. Eyink, Kurt G. Eyink Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorJohn J. Boeckl, John J. Boeckl Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorDavid H. Tomich, David H. Tomich Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorShanee D. Pacley, Shanee D. Pacley Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorJohn. E. Hoelscher, John. E. Hoelscher Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this author Jeongho Park, Corresponding Author Jeongho Park [email protected] Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA).Search for more papers by this authorWilliam C. Mitchel, William C. Mitchel Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorLawrence Grazulis, Lawrence Grazulis Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorHoward E. Smith, Howard E. Smith Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorKurt G. Eyink, Kurt G. Eyink Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorJohn J. Boeckl, John J. Boeckl Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorDavid H. Tomich, David H. Tomich Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorShanee D. Pacley, Shanee D. Pacley Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this authorJohn. E. Hoelscher, John. E. Hoelscher Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/RXPS, Wright – Patterson Air Force Base, Ohio, 45433 (USA)Search for more papers by this author First published: 20 August 2010 https://doi.org/10.1002/adma.201000756Citations: 108Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large-area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CMBE with C60 produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1). Supporting Information Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Filename Description adma_201000756_sm_suppl.pdf271.5 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. References 1 K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. 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Publication Year: 2010
Publication Date: 2010-08-20
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
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Cited By Count: 116
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