Title: Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier
Abstract:Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional and graded last barriers (GLB) are numerically investigated. When the last GaN barrier is replaced by a linearly graded...Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional and graded last barriers (GLB) are numerically investigated. When the last GaN barrier is replaced by a linearly graded InxGa1 − xN barrier with increasing indium composition in the growth direction, the forward voltage is reduced from 3.60 V to 3.25 V, and the efficiency droop is improved from 36% to 13%. Simulation results indicate that these improvements can be attributed to the formation of a deep potential well in the GLB which enhances the electron confinement and improves the hole injection efficiency.Read More
Publication Year: 2011
Publication Date: 2011-12-05
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 74
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