Abstract: In this paper, the concept of double gate transistors is applied to mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) fabricated on free standing plastic foils. Due to the temperature sensitivity of the plastic substrate, a-IGZO is a suitable semiconductor since it provides carrier mobilities of ~ 10 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs when deposited at room temperature. Double gate TFTs with connected bottom and top gate are compared to bottom gate reference TFTs fabricated on the same substrate. Double gate a-IGZO TFTs exhibit a by 74% increased gate capacitance, a by 0,7 V higher threshold voltage, and therefore an up to 51% increased transconductance. The subthreshold swing and the on/off current ratios are improved as well, and reach excellent values of 69 mV/dec and 2×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> , respectively. The mechanical flexibility is demonstrated by showing device operation while the TFT is exposed to tensile strain of 0.55%, induced by bending to a radius of 5 mm.
Publication Year: 2012
Publication Date: 2012-09-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 2
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