Title: Transverse diffusion of minority carriers confined near the GaAs surface plane
Abstract: Spatially separated second-harmonic generating and photocarrier exciting light beams were employed to study transverse diffusion of carriers confined near GaAs(001) surfaces. The measurements utilize the intrinsic sensitivity of second-harmonic generation to surface charge density in order to probe these processes. Carrier transport was found to be diffusive with small effective diffusion coefficients compared to those of carriers in the bulk. Several models are considered to explain these results.
Publication Year: 1995
Publication Date: 1995-05-15
Language: en
Type: article
Indexed In: ['crossref', 'pubmed']
Access and Citation
Cited By Count: 3
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