Title: Actual Carrier Mobility Determination of GaInAsSb/InAs Grown by Liquid Phase Epitaxy
Abstract: A theory for the effective mobility and the density of carriers of a double layer is given and compared with an old theory established by Petritz [Phys. Rev. 110 (1958) 1254]. Validity of the present theory is confirmed by an experiment using an epitaxial layer of Gd-doped GaInAsSb layer grown on an InAs substrate by Liquid Phase Epitaxial (LPE) method.