Abstract: InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240°C and temperatures of In and P cells were 840∼880°C and 370∼400°C, respectively. Furthermore, Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.
Publication Year: 1976
Publication Date: 1976-12-01
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 14
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot