Title: Dominant Failure Mechanism in Data Retention Characteristics of Resistance Change Memory Consisting of NiO at High Temperature
Abstract:We investigated the dependence of data retention characteristics of a resistance change memory (RCM) consisting of NiO on bottom electrode material, Pt/Ti and Pt/TiO2. Data retention time was longer i...We investigated the dependence of data retention characteristics of a resistance change memory (RCM) consisting of NiO on bottom electrode material, Pt/Ti and Pt/TiO2. Data retention time was longer in Pt/NiO/Pt/Ti/SiO2 structures compared with that in Pt/NiO/Pt/TiO2/SiO2 structures. A secondary ion mass spectrometry profile suggested that this improvement in data retention time was a result of the thin TiO2 layer formed by Ti atoms diffusing to the boundary between the NiO layer and the Pt bottom electrode. In addition, the formation of a leakage path outside the filament, in which the resistance switching and memory effect occur, is suggested to be a predominant failure mechanism in data retention characteristics of NiO-RCM against heat.Read More
Publication Year: 2008
Publication Date: 2008-12-05
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 6
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