Title: Growth and electrical properties of cuprous telluride thin films
Abstract: Polycrystalline thin films of cuprous telluride were grown on mica substrates by vacuum evaporation at 350 °C and were then annealed at the same temperature in a vacuum for about 2 h. The films, which were grown using a stoichiometric charge, were found to have large numbers of copper vacancies. Hall coefficient and Hall mobility studies of these films were made in the temperature range 77–300 K. The observed variation in the Hall mobility with temperature indicated that the mobility is mainly limited by defect scattering and ionized impurity scattering in the temperature range 77–200 K, while lattice scattering is predominant at temperatures above 200 K.
Publication Year: 1983
Publication Date: 1983-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 7
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