Title: Investigation of dislocation structures in ribbon- and ingot-grown multicrystalline silicon
Abstract: Abstract In this paper, an experimental study of dislocation structures in multicrystalline silicon is presented. The alignment of dislocations in samples from both edge-defined film-fed growth and ingot crystallization by vertical Bridgman growth is investigated. Crystallographic orientations of single grains and dislocation structures are analyzed by electron backscatter diffraction and infrared microscopy. { 111 } and { 211 } planes are identified to be the typical crystallographic planes, where dislocations are arranged. It is concluded that { 111 } and { 211 } planes are involved in plastic deformation and recovery processes during growth, respectively. In ribbon-grown samples, the dislocations are mainly arranged on { 111 } slip planes, whereas an arrangement on { 211 } planes prevails in ingot-grown samples. The influence of the growth and cooling conditions on the final alignment of dislocations in mc-Si is discussed and a possible explanation for a different annealing behaviour of ribbon- and ingot-grown crystals is given.
Publication Year: 2013
Publication Date: 2013-08-06
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 8
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