Title: Design, Fabrication and Test of In-Plane MEMS Piezoresistive High-g Accelerometer
Abstract: The new structure of in-plane high-g MEMS sensor for 10,000-150,000g has been designed in our paper, and it was packaged in dimensions of 17.5mm×12mm×4.5mm. In our experiments, the sensitivity reach to 0.335uv/g by the Hopkinson bar system and it also is in quick respose to the frequence. Meanwhile, the results show that all acceleration-time pulses are in very close agreement for acceleration amplitudes to about 150000g. It is a new way to monolithically integral triaxial piezoresistive high-g accelerometer in the future.
Publication Year: 2014
Publication Date: 2014-04-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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