Title: A Drain Current - Drain Voltage Relation for MOSFETs with High-k Gate Stacks
Abstract: New analytical MOSFET drain-current-drain-voltage relations have been derived incorporating effects of gate stack traps and charges, semiconductor-metal work function difference, and non-saturating surface potential, employing a novel approach of treating these complicating factors. These analytical drain current, transconductance, and channel conductance versus drain voltage relations in closed form provide a comprehensive and clear physical picture and show directly how the gate stack traps and charges, the non-saturating surface potential, and the semiconductor-metal work function difference affect and significantly degrade the drain current, the transconductance, and the channel conductance.
Publication Year: 2011
Publication Date: 2011-10-04
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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